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The influence of single carbon atom impurity on the electronic transport of two side-closed (6, 0) single-walled boron nitride nanotubes | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 7، شماره 1، اسفند 2023، صفحه 707-719 اصل مقاله (1.44 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2024.45631.1101 | ||
| نویسنده | ||
| Ali Mohammad Yadollahi* | ||
| Department of Physics, Ayatollah Amoli Branch, Islamic Azad University, Amol, Iran | ||
| چکیده | ||
| This study investigated the effect of single-carbon atom impurity on the electronic properties of two side-closed (6, 0) single-walled boron nitride nanotubes ((6, 0) TSC-SWBNNTs) in the center, left, and right sides of this NT. The band gap was affected and significantly reduced by applying single-carbon atom impurity. Most changes in the band gap were related to the impurity of the carbon atom in the center of the NT. The comparison of transmission spectrum figures and the density of states figures demonstrated that at points of energy where resonance occurs between the electron of collision and the molecular levels, the peaks of the transmission coefficient are close to the molecular levels, leading to electron transportation and conduction occurrenceIn addition, despite the existing regularity in the arrangement of boron and nitrogen atoms on the two sides of the NT and the positive influence of the interference effect in the two sides of the NT, with the increase of the bias voltage, especially in the low bias voltage, there was not a visible decrease in the current value. Overall, the presence of negative resistance in the current figure in terms of bias voltage can be used as a high-speed electronic switch. | ||
| کلیدواژه‌ها | ||
| Transmission؛ Current؛ Boron nitride nanotubes؛ Electronic transport؛ Negative differential resistance | ||
| عنوان مقاله [English] | ||
| اثر ناخالصی تک اتم کربن بر ترابرد الکترونیکی نانولوله ی نیترید بور دو سر بسته ی (6،0) | ||
| نویسندگان [English] | ||
| علی محمد یدالهی | ||
| گروه فیزیک، دانشگاه آزاد اسلامی، واحد آیت الله آملی، آمل، ایران | ||
| چکیده [English] | ||
| این مطالعه اثر ناخالصی تک اتم کربن را بر خواص الکترونیکی نانولوله دو سر بسته نیترید بور (0و6) در مرکز، چپ و راست بررسی نموده است. شکاف باند با اعمال ناخالصی تک اتم کربن به طور قابل توجهی کاهش یافته است. بیشتر تغییرات در شکاف باند مربوط به ناخالصی اتم کربن در مرکز این نانولوله می باشد. مقایسه نمودارهای طیف انتقال و چگالی حالات نشان می دهد که در نقاطی از انرژی که رزونانس بین الکترون برخورد و سطوح مولکولی رخ می‌دهد، قله‌های ضریب انتقال نزدیک به سطوح مولکولی اتفاق می افتد که منجر به ترابرد و هدایت الکترونی می‌شود. علاوه بر این، با وجود نظم موجود در آرایش اتم های بور و نیتروژن در دو طرف نانولوله و تأثیر مثبت اثر تداخل در دو طرف این نانولوله، با افزایش ولتاژ بایاس، به ویژه در پایین ولتاژ بایاس، کاهش قابل مشاهده ای در مقدار جریان وجود ندارد. به طور کلی، وجود مقاومت منفی برحسب ولتاژ بایاس می تواند به عنوان یک کلید الکترونیکی پرسرعت استفاده شود. | ||
| کلیدواژه‌ها [English] | ||
| ترابرد, جریان, نانولوله های نیترید بور, ترابرد الکترونیکی, مقاومت دیفرانسیلی منفی | ||
| مراجع | ||
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