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مقالۀ پژوهشی: بررسی اثر نیمه رساناهای مختلف بر عملکرد باتری رادیوایزوتوپی | ||
فیزیک کاربردی ایران | ||
دوره 13، شماره 4 - شماره پیاپی 35، دی 1402، صفحه 93-111 اصل مقاله (2.24 M) | ||
نوع مقاله: مقاله پژوهشی | ||
شناسه دیجیتال (DOI): 10.22051/ijap.2023.44175.1334 | ||
نویسنده | ||
نجمه محمدی* | ||
استادیار، گروه فیزیک دانشکده علوم پایه، دانشگاه صنعتی سهند، تبریز، ایران | ||
چکیده | ||
هدف از این پژوهش بررسی نظری عملکرد باتری بتاولتائیک با چشمه رادیوایزوتوپی C14 و نیمهرساناهای مختلف بر پایه اتصال p-n است. برای این منظور ابتدا ضخامت اشباع چشمه C14 و توزیع انرژی ذخیره شده ناشی از ذرات بتای گسیل شده در نیمهرساناهای مختلف شاملGaAs ، GaN ،SiC و الماس با استفاده از کد مونت کارلوی MCNPX شبیهسازی و محاسبه شده است. با توجه به نتایج بدست آمده، ضخامت بهینه چشمه C14، 30 میکرومتر تعیین گردید. سپس با به کارگیری روابط تحلیلی و الگوی عددی، ارتباط بین چگالی ناخالصیهای اضافه شده به نیمهرساناها و پارامترهای عملکرد باتری هستهای بتاولتائیک از جمله چگالی جریان مدار کوتاه، ولتاژ مدار باز و چگالی توان خروجی باتری ارزیابی شده است. نتایج نشان دادند که در بهترین حالت، با قرار دادن الماس به عنوان نیمهرسانا در چیدمان باتری و با وارد کردن ناخالصی با چگالی و توان خروجی باتری به میزان 68/9 افزایش مییابد. | ||
کلیدواژهها | ||
باتری بتاولتائیک؛ نیمه رسانا؛ چشمه C 14؛ اتصال p-n | ||
عنوان مقاله [English] | ||
Research Paper: Evaluation of Different Semiconductors Effect on Radio-Isotopic Battery Performance | ||
نویسندگان [English] | ||
Najmeh Mohammadi | ||
Assistant Professor, Physics Department, Faculty of Science, Sahand University of Technology, Tabriz, Iran | ||
چکیده [English] | ||
This work aimed to theoretically investigate the operation of the beta voltaic battery with the 14C radio isotopic source and several semiconductors in the p-n junction structure. For this purpose, the saturated thickness of the 14C beta source and energy deposition distribution of beta particles emitted from this source is simulated and calculated in the various semiconductors including the GaAs, GaN, SiC, and diamond using the Monte Carlo code of MCNPX. Regarding the results obtained, the optimized 14C thickness was achieved by 30 micrometers. Then, applying the analytical and numerical model, the relationships between the doping concentration, short circuit current density, open circuit voltage, and output power density were evaluated. The results showed that with and with the diamond as semiconductor, the output power density of designed battery was increased to 9.68 among the other considered semiconductors. | ||
کلیدواژهها [English] | ||
Beta-voltaic Battery, Semiconductor, 14C Source, p-n Junction | ||
مراجع | ||
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