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Effect of hydrostatic pressure on the Auger recombination rate of InGaN/GaN multiple quantum well laser diode | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 6، شماره 1، آبان 2022، صفحه 547-558 اصل مقاله (1.26 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2023.43080.1082 | ||
| نویسندگان | ||
| Rajab Yahyazade sedghiani* ؛ Zahra Hashempour | ||
| Department of Physics, Khoy Branch, Islamic Azad University, Khoy, Iran | ||
| چکیده | ||
| In this study, a numerical model was used to analyze the Auger recombination rate in c-plane InGaN/GaN multiple-quantum-well lasers(MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of MQWLD, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019 cm-3 and 0.56×1019cm-3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77 MV/cm , and decrease the Auger recombination rate up to 0.6×1027cm3s-1 in the multiple-quantum well regions. Also, calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger recombination rate had the largest contribution to the Auger recombination rate. Our studies provided more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based LEDs. | ||
| کلیدواژه‌ها | ||
| Auger Recombination؛ Overlap integrals؛ Laser diode؛ Multi-quantum well | ||
| عنوان مقاله [English] | ||
| تأثیر فشار هیدرواستاتیک بر میزان بازترکیبی اوگر در دیود لیزر با چاه کوانتم چند گانه InGaN/GaN | ||
| نویسندگان [English] | ||
| رجب یحیی زاده صدقیانی؛ زهرا هاشم پور | ||
| گروه فیزیک، دانشگاه آزاد اسلامی واحد خوی، خوی، ایران | ||
| چکیده [English] | ||
| در این مطالعه، یک مدل عددی برای تجزیه و تحلیل میزان بازترکیبی اوگر در دیود های لیزری با چاه کوانتم چند گانه C-plane InGaN/GaN تحت فشار هیدرواستاتیک استفاده شده است . برای به دست آوردن مقادیر ویژه انرژی و توابع ویژه مربوط به دیود های لیزری از تکنیک‌های دیفرانسیل محدود استفاده شد و حالت‌های ویژه حفره ها با استفاده از روش6×6 k.p تحت فشار هیدرواستاتیک اعمال شده محاسبه شد ه است . مشخص شد که تغییر فشار تا 10 گیگا پاسکال، چگالی حامل را به ترتیب تا 0.75×10^19 cm-3 و 0.56×10^19cm-3 برای حفره‌ها و الکترون‌ها و شکاف باند مؤثر را افزایش می‌دهد. بر اساس نتیجه، می‌تواند انرژی بستگی اکسایتون را کاهش دهد، نرخ میدان الکتریکی را تا 0.77MV/cm و نرخ نوترکیبی اوگر را به میزان cm^3s^-1 27^10×0.6 ترتیب در نواحی چاه‌های کوانتومی چندگانه کاهش دهد. همچنین محاسبات نشان داد که سرعت نوترکیبی اوگر حفره-حفره-الکترون (CHHS) و الکترون-الکترون-حفره (CCCH) بیشترین سهم را در نرخ نوترکیبی اوگر داشته است. مطالعات ما بینش دقیق تری را در مورد منشاء افت میزان بازترکیبی اوگر تحت فشار هیدرواستاتیک در دیود های لیزری مبتنی بر InGaN ارائه می کند. | ||
| کلیدواژه‌ها [English] | ||
| بازترکیبی اوگر, انتگرال های همپوشانی, دیود لیزری, چاه کوانتم چند گانه | ||
| مراجع | ||
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