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Correlation of heat treatment and structural, optical, and electrical properties of titanium nitride thin layers | ||
Journal of Interfaces, Thin Films, and Low dimensional systems | ||
دوره 6، شماره 1، آبان 2022، صفحه 591-602 اصل مقاله (1.33 M) | ||
نوع مقاله: Original Article | ||
شناسه دیجیتال (DOI): 10.22051/jitl.2023.42338.1078 | ||
نویسندگان | ||
Somayeh Asgary* ؛ Zhaleh Ebrahiminejad؛ Amir Hoshang Ramezani | ||
Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran | ||
چکیده | ||
TiN thin films are prepared by the DC magnetron sputtering method, and the effect of post annealing treatment on the physical, structural, morphological, and optical properties of TiN layers are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV-VIS spectrophotometer. Variation of electrical resistivity and film’s hardness are also investigated. Based on the XRD results, increasing annealing temperature would not change film’s stoichiometry, but deteriorates improvement of the films crystalline quality. The as-deposited film with amorphous structure changes to a single-phase crystalline structure that has a preferred orientation along (111) and the polycrystalline structure at higher annealing temperatures. According to SEM images, a dense structure transforms to a denuded zone structure during annealing temperature. The reflectance of TiN films shows a minimum in the visible region indicating a significant increase in the infrared region. The optical band gap energy value increases by increasing the annealing temperature while, the electrical resistivity and hardness values decrease. | ||
کلیدواژهها | ||
TiN films؛ DC magnetron sputtering؛ preferred growth orientation | ||
عنوان مقاله [English] | ||
همبستگی رفتار دمایی و خواص ساختاری، اپتیکی و الکتریکی لایه های نازک نیترید تیتانیوم | ||
نویسندگان [English] | ||
سمیه عسگری؛ ژاله ابراهیمی نژاد؛ امیر هوشنگ رمضانی | ||
گروه فیزیک، دانشگاه آزاد اسلامی واحد تهران غرب، تهران، ایران. | ||
چکیده [English] | ||
لایههای نازک قلع با روش کندوپاش مگنترون DC تهیه شد و تأثیر عملیات بازپخت بر روی خواص فیزیکی، ساختاری، ریختشناسی و نوری لایههای قلع با پراش اشعه ایکس (XRD)، میکروسکوپ الکترونی روبشی (SEM)، میکروسکوپ نیروی اتمی (AFM) و اسپکتروفتومتر UV-VIS بررسی شد.تغییر مقاومت الکتریکی و سختی فیلم نیز مورد بررسی قرار گرفته است. بر اساس نتایج XRD، افزایش دمای بازپخت در استوکیومتری فیلم تغییری نکرد، اما کیفیت کریستالی فیلم را بدتر کرد. فیلم انباشت شده با ساختار آمورف به یک ساختار کریستالی تک فازی که جهتگیری ترجیحی در امتداد (111) دارد و ساختار پلی کریستالی در دمای بازپخت بالاتر تغییر یافت. با توجه به تصاویر SEM، یک ساختار متراکم در طول بازپخت به یک ساختار منطقه برهنه تبدیل شد. بازتاب فیلم های TiN حداقل را در ناحیه مرئی نشان می دهد و بیانگر افزایش قابل توجه بازتاب در ناحیه مادون قرمز است. مقدار انرژی فاصله باند نوری با افزایش دمای بازپخت افزایش می یابد، در حالی که مقاومت الکتریکی و مقادیر سختی کاهش می یابد. | ||
کلیدواژهها [English] | ||
فیلم های قلع, کندوپاش مگنترون DC, جهت گیری ترجیحی رشد | ||
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