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Effect of temperature changes on thermoelectric properties of the two sided-closed single-walled Boron Nitride nanotubes (6, 3) | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 5، شماره 1، بهمن 2021، صفحه 421-427 اصل مقاله (1.18 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2022.40200.1072 | ||
| نویسندگان | ||
| Ali Mohammad Yadollahi1؛ Peyman Azimi Anaraki* 1؛ Mojtaba Yaghobi2؛ Mohammad Reza Niazian2 | ||
| 1Department of Physics, Takestan Branch, Islamic Azad University, Takestan, Iran | ||
| 2Department of Physics, Ayatollah Amoli Branch, Islamic Azad University, Amol, Iran | ||
| چکیده | ||
| In this study, thermoelectric properties of the two sided-closed single-walled boron nitride nanotubes (TSC-SWBNNTs) are investigated. For this purpose, a nanotube with the chirality of (6, 3) is selected with no impurities. The energy is considered in the range of -5.5 to 5.5 electron volts and the investigations are performed at the temperatures 300, 500, 700 and 900K. The results show that increasing temperature results in significant reduction in the length of the bandgap. Besides, the peaks of the conduction diagram become smaller and their number decreases, indicating the return of more electrons and holes around the LUMO and HOMO bands, respectively, which leads to reduction of the bandgap and increase in the conduction. Moreover, the seebeck coefficient (thermal power) has increased to about 370 μV/K by increasing temperature to 900K. As the temperature increases, the coefficient of merit (ZT) increases to about 0.95, and it is expected to experience more increase with further increase in temperature. Thermal conductivity has also increased slightly with increasing temperature. However, the values of thermal conductivity are at the nanoscale. Therefore, in general, it can be concluded that the (TSC-SWBNNT) (6, 3) can be selected as a suitable thermoelectric material. | ||
| کلیدواژه‌ها | ||
| nanotube؛ seebeck coefficient (thermal power)؛ coefficient of merit؛ thermal conductivity؛ electrical conductivity | ||
| عنوان مقاله [English] | ||
| اثر تغییرات دما بر روی ویژگیهای ترموالکتریکی نانولوله تک لایه ی دو سر بسته ی نیترید بور (6،3) | ||
| نویسندگان [English] | ||
| علی محمد یدالهی1؛ پیمان عظیمی انارکی1؛ مجتبی یعقوبی2؛ محمد رضا نیازیان2 | ||
| 1گروه فیزیک، واحد تاکستان، دانشگاه آزاد اسلامی، تاکستان، ایران | ||
| 2گروه فیزیک، واحد آیت الله آملی، دانشگاه آزاد اسلامی، آمل، ایران | ||
| چکیده [English] | ||
| در این تحقیق خصوصیات ترموالکتریک نانو لوله ی نیترید بور دو سر بسته تک لایه ی (TSC-SWBNNT(6,3) ) در حالت بدون ناخالصی در بازه ی انرژی 5.5- تا 5.5 الکترون ولت و دماهای 200، 300، 500، 700 و 900 کلوین مورد بررسی قرار گرفت. نتایج نشان می دهد با افزایش دما طول باند گپ تحت تاثیر قرار گرفته و کاهش محسوسی می یابد. پیکهای نمودار رسانش با افزایش دما کوچکتر و کمتر شده است که نشان دهنده ی مراجعت تعداد بیشتر الکترونها و حفره ها به ترتیب اطراف باند لومو (LUMO) و هومو (HOMO) و باعث کاهش باند گپ و افزایش رسانش شده است. ضمنا ضریب سیبک ( توان حرارتی) با افزایش دما تا 900 کلوین، افزایش تا حدود 370 میکرو ولت بر کلوین را تجربه کرده است. با افزایش دما، ضریب شایستگی (ZT) تا حدود عدد 0.95 افزایش یافته که انتظار می رود با افزایش بیشتر دما، این ضریب مقادیر بیشتری را تجربه کند. رسانندگی گرمایی نیز با افزایش دما مقداری افزایش یافته ولی در حد نانو محدود مانده است که نشان از کوچک بودن مقدار آن می باشد. بنابراین در کل می توان نتیجه گرفت این نانولوله می تواند به عنوان ماده ترموالکتریک مناسبی انتخاب گردد. | ||
| کلیدواژه‌ها [English] | ||
| نانو لوله, ضریب سیبک (توان حرارتی), ضریب شایستگی, رسانش گرمایی, رسانش الکتریکی | ||
| مراجع | ||
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