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DFT study of Silicon channel effects embedded between armchair graphene nanoribbons with different widths on mechanical and electronic properties | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 4، شماره 2، خرداد 2021، صفحه 385-392 اصل مقاله (1.73 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2022.38021.1063 | ||
| نویسنده | ||
| Mehdi Zarepour* | ||
| Microwave/mm-wave and Wireless Communication Research Lab, Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran | ||
| چکیده | ||
| Graphene Nano-Ribbons (GNR) are strong candidates for future materials in the electronics industry. In this paper, we extract the mechanical and electrical properties of AGNRs combination of different widths and deposition of silicon dimer to create Metal-insulator-semiconductor by the DFT method. Results demonstrate that by decreasing the mean width and strain of AGNR-AGNR composite and replacing the carbon dimer with silicon dimer, the bandgap of the system will reduce. The AGNR-Si-AGNR composite is a promising candidate for transistor application due to the small bandgap and high current flow allowance due to the high near the Fermi’s level electronic state involvement under the bias voltage. | ||
| کلیدواژه‌ها | ||
| Graphene Nano-Ribbon؛ channel؛ bandgap؛ DFT | ||
| عنوان مقاله [English] | ||
| مطالعه DFT اثرات سیلیکون قرار گرفته شده بین نانو روبان های گرافنی دسته صندلی با عرض های متفاوت بر روی خواص مکانیکی و الکترونیکی | ||
| نویسندگان [English] | ||
| مهدی زارعپور | ||
| گروه مهندسی برق، دانشگاه صنعتی امیرکبیر، تهران، ایران | ||
| چکیده [English] | ||
| نانو نوارهای گرافنی (GNR) یکی از کاندیداهای مهم مورد استفاده در صنعت الکترونیک هستند. در این مقاله ، خواص مکانیکی و الکتریکی ترکیب نانو نوارهای گرافنی دسته صندلی با عرض های مختلف و رسوب دیمر سیلیکون برای ایجاد فلز عایق-نیمه هادی با روش DFT مورد بررسی قرار داده ایم. نتایج نشان می دهد که با کاهش میانگین عرض و کرنش کامپوزیت AGNR-AGNR و جایگزینی دیمر سیلیکون با دیمر کربن ، شکاف باند (bandgap) سیستم کاهش می یابد. با کاهش شکاف باند کامپوزیت AGNR-Si-AGNR مورد بررسی قرار می گیرد که مشخص می شود این کامپوزیت کاندیدای امیدوار کننده ای برای استفاده به عنوان ترانزیستور است ، زیرا دارای شکاف باند کم است و همچنین به دلیل نزدیک بودن به سطح فرمی تحت ولتاژ بایاس، عبورجریان زیاد در این ساختار امکان پذیر است. | ||
| کلیدواژه‌ها [English] | ||
| نانو نوار گرافنی, شکاف باند کانال, DFT | ||
| مراجع | ||
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