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The influence of deposition rate on optical and microstructural characteristics of nanostructured ZnSe films prepared by thermal evaporation technique | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 4، شماره 1، بهمن 2020، صفحه 347-356 اصل مقاله (1.25 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2021.36255.1054 | ||
| نویسندگان | ||
| Mohsen Ghasemi* 1؛ Soodeh Momeni1؛ Afrouz Taherian2 | ||
| 1Department of Physics, Faculty of Sciences, Shahrekord University, Shahrekord, Iran | ||
| 2Faculty of Physics, University of Isfahan, Isfahan, Iran | ||
| چکیده | ||
| In this research, ZnSe thin films were deposited on glass substrate by the thermal evaporation method with deposition rates of 0.2, 0.4, 0.6, and 0.8 nm/s and with a constant thickness of 250 nm. All samples were annealed for 100 minutes at a temperature of 400 °C. Various techniques such as UV–Vis spectrophotometer, X-ray diffraction (XRD) analysis, and scanning electron microscope (SEM) were used to investigate different physical parameters such as energy band gap, refractive index, extinction coefficient, dielectric constant, and porosity of the ZnSe thin films. The influence of the deposition rate on the mentioned parameters was investigated. The XRD patterns showed that the ZnSe thin films have a cubic structure. The structural parameters such as lattice constant, crystallite size, strain, and dislocation density were determined for different samples. The maximum average transmittance of %93.1 in the visible wavelength region was obtained for the deposition rate of 0.6 (nm/s). The optical band gap was calculated using the derivation of absorption spectrum fitting (DASF) method, and the values of the energy bandgap were obtained in the range of 3.710.01 to 3.980.01 eV. The XRD results acquired from the Williamson-Hall method showed that the crystallites size and strain of different samples were achieved in the range of 21.61.1 to 42.92.3 nm and (0.610.02)×10-3 to (2.890.04)×10-3, respectively. Finally, the relation between the optical and microstructural properties of the ZnSe films was studied. | ||
| کلیدواژه‌ها | ||
| thermal evaporation technique؛ nanostructured ZnSe films؛ deposition rate؛ optical properties؛ microstructural properties | ||
| عنوان مقاله [English] | ||
| تاثیر آهنگ انباشت بر مشخصات اپتیکی و ریزساختاری لایه های نانوساختار ZnSe تهیه شده با روش تبخیر حرارتی | ||
| نویسندگان [English] | ||
| محسن قاسمی1؛ سوده مومنی1؛ افروز طاهریان2 | ||
| 1گروه فیزیک، دانشکده علوم، دانشگاه شهرکرد، ایران | ||
| 2دانشکده فیزیک، دانشگاه اصفهان، اصفهان، ایران | ||
| چکیده [English] | ||
| در این پژوهش ، لایه های نازک ZnSe با روش تبخیر حرارتی با آهنگ انباشت 0.2 ، 0.4 ، 0.6 و 0.8 نانومتر بر ثانیه و با ضخامت ثابت 250 نانومتر بر روی بستره شیشه ای انباشت شدند. همه نمونه ها به مدت 100 دقیقه در دمای 400 درجه سانتیگراد آنیل شدند. تکنیک های مختلفی مانند طیف سنجی UV-Vis ، آنالیز پراش اشعه X (XRD) و میکروسکوپ الکترونی روبشی (SEM) برای بررسی پارامترهای فیزیکی مختلف مانند گاف انرژی ، ضریب شکست ، ضریب خاموش شدن ، ثابت دی الکتریک و تخلخل استفاده شد. تأثیر آهنگ انباشت بر پارامترهای ذکر شده مورد بررسی قرار گرفت. طیف‌های XRD نشان داد که لایه های نازک ZnSe دارای ساختار مکعبی هستند و پارامترهای ساختاری مانند ثابت شبکه ، اندازه بلورها ، کرنش و چگالی دررفتگی برای نمونه های مختلف تعیین شد. حداکثر میانگین عبور93.1٪ در ناحیه طول موج مرئی برای آهنگ انباشت 0.6 (نانومتر بر ثانیه) بدست آمد. گاف انرژی با استفاده از روش استخراج از برازش طیف جذب (DASF) محاسبه شد و مقادیر گاف انرژی در محدوده 3.71±0.01 تا 3.98±0.01 الکترون ولت بدست آمد. در نهایت، رابطه بین ویژگی های اپتیکی و ریزساختاری لایه های ZnSe مورد مطالعه قرار گرفت. | ||
| کلیدواژه‌ها [English] | ||
| تکنیک تبخیر حرارتی, لایه های ZnSe نانوساختار, آهنگ انباشت, خواص اپتیکی, خواص ریزساختاری | ||
| مراجع | ||
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