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Deposition of TiCrN on silicon substrate using radio frequency magnetron sputtering | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 4، شماره 1، بهمن 2020، صفحه 357-364 اصل مقاله (2.44 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2021.35578.1052 | ||
| نویسندگان | ||
| Samira Nassiri1؛ Eslam Ghareshabani* 2 | ||
| 1Faculty of Physics, Sahand University of Technology, Tabriz, Iran | ||
| 2Faculty of Physics, Sahand University of Technology,Tabriz, Iran | ||
| چکیده | ||
| The ternary titanium chromium nitride (TiCrN) thin film on Si (100) substrate without any external temperature was deposited by radio frequency (RF) magnetron sputtering. The substrate was kept at a distance of 35 mm from the target. The growth morphology, crystalline structure, roughness, contact angle, and thickness of the coatings were studied as a function of the input RF power and negative bias voltage. The grazing incident X-ray diffraction (GIXRD) results show that TiCrN diffraction peaks appeared only in samples with substrate bias = -70 V. The surface morphology was investigated by Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The films change from hydrophilic to hydrophobic with the increase of negative bias voltage. The roughness and contact angle of the samples increase with the decrease in the RF power from 300 W to 200 W. In both cases (a) and (b), the deposition rate increases as a result of an increase in the target power. | ||
| کلیدواژه‌ها | ||
| TiCrN؛ RF magnetron sputtering؛ bias voltage؛ GIXRD؛ FE-SEM | ||
| عنوان مقاله [English] | ||
| لایه نشانی تیتانیوم کروم نیترید روی زیر لایه سیلیکون به وسیله کندوپاش مگنترونی رادیو فرکانسی | ||
| نویسندگان [English] | ||
| سمیرا نصیری1؛ اسلام قره شعبانی2 | ||
| 1گروه فیزیک، دانشگاه صنعتی سهند، تبریز، ایران | ||
| 2گروه فیزیک، دانشگاه صنعتی سهند، تبریز، ایران | ||
| چکیده [English] | ||
| لایه نازک سه تایی تیتانیوم کروم نیتراید روی زیر لایه سیلیکون (100) بدون دمای خارجی به وسیله کندوپاش مگنترونی رادیو فرکانسی نهشت شد. زیر لایه در فاصله 35 میلی متری از هدف قرار داده شد. ریخت شناسی رشد، ساختار کریستالی، زبری، زاویه تماس و ضخامت پوشش به صورت تابعی از توان رادیو فرکانسی ورودی و ولتاژ بایاس منفی مطالعه شد. نتایج پراش اشعه ایکس نشان می دهد که پیکهای پراش تیتانیوم کروم نیتراید فقط در نمونه های با بایاس منفی 70 ولت زیرلایه رویت شد. ریخت شناسی سطح به وسیله میکروسکوپ نیروی اتمی و میکروسکوپ الکترونی روبشی نشر میدان بررسی شد. فیلمها با افزایش ولتاژ بایاس منفی از آبدوستی به آبگریزی تغییر می کنند. زبری و زاویه تماس نمونه ها با کاهش توان رادیو فرکانسی از 300 وات به 200 وات افزایش می یابند. در هر دو حالت (الف) و (ب) آهنگ نهشت با افزایش توان هدف، افزایش می یابد. | ||
| کلیدواژه‌ها [English] | ||
| تیتانیوم کروم نیتراید, کندوپاش مگنترونی رادیو فرکانسی, ولتاژ بایاس, اشعه پراش ایکس, میکروسکوپ الکترونی روبشی نشر میدان | ||
| مراجع | ||
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