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Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors | ||
| Journal of Interfaces, Thin Films, and Low dimensional systems | ||
| دوره 2، شماره 2، مرداد 2019، صفحه 183-194 اصل مقاله (450.48 K) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22051/jitl.2020.26104.1031 | ||
| نویسنده | ||
| Rajab Yahyazadeh* | ||
| Department of Physics, Khoy Branch, Islamic Azad University, Khoy, Iran | ||
| چکیده | ||
| In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects are taken into account. It has been found that the drain-source current decreases with increasing temperature and increases with increasing hydrostatic pressure. The increase in temperature is equivalent to a negative virtual gate and an increase in the hydrostatic pressure equivalent to the positive virtual gate voltage. Moreover, the temperature and hydrostatic pressure effective mass dependence in high electron mobility transistor structures are investigated, and it is observed that the increase of hydrostatic pressure decreases the effective mass and the wave function penetrated to the quantum barrier AlGaN. In general, the process of increasing and decreasing the cutoff frequency and transconductance is similar to the variations in the drain-source current. The calculated results are in good agreement with existing experimental data. | ||
| کلیدواژه‌ها | ||
| temperature؛ pressure؛ effective mass؛ AlGaN/GaN HEMTs؛ cut-off frequency | ||
| عنوان مقاله [English] | ||
| تاثیر فشار و دما بر ترانزیستورهای اثر میدان با تحرک بالای الکترونی AlGaN/GaN | ||
| نویسندگان [English] | ||
| رجب یحیی زاده صدقیانی | ||
| گروه فیزیک، دانشگاه آزاد اسلامی، واحد خوی، خوی، ایران | ||
| چکیده [English] | ||
| در این مقاله، جریان درین- سورس، رسانندگی متقابل و فرکانس قطع در ترانزیستورهای با تحرک پذیری بالای الکترونی AlGaN/GaN مورد بررسی قرار گرفته است. برای به دست آوردن دقیق پارامترهای ترانزیستورهای با تحرک بالای الکترونی (همت) AlGaN/GaN مانند چگالی الکترون، عملکرد موج، گاف نواری، قطبش پذیری، جرم موثر و ثابت دی الکتریک؛ اثرات فشار هیدرواستاتیک و دما مورد بررسی قرار می گیرند. نتایج حاصله نشانگر این است که جریان درین-سورس با افزایش دمای کاهش می یابد و با افزایش فشار هیدرواستاتیکی افزایش می یابد. افزایش دما معادل یک گیت مجازی منفی و افزایش فشار هیدرواستاتیک برابر با ولتاژ گیت مجازی مثبت است. همچنین در ساختارهای HEMT وابستگی جرم مؤثر به دما و فشار هیدرواستاتیک بررسی شده است و مشاهده می شود که افزایش فشار هیدرواستاتیک جرم موثر و نفوذ تابع موج را به سد کوانتمی AlGaN کاهش می دهد. به طور کلی، فرایند افزایش و کاهش فرکانس قطع و رسانندگی متقابل مشابه تغییرات در جریان درین- سورس است. نتایج محاسبه شده با داده های تجربی موجود تطابق خوبی دارند. | ||
| کلیدواژه‌ها [English] | ||
| دما, فشار, جرم موثر, AlGaN/GaN HEMTs, فرکانس قطع | ||
| مراجع | ||
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