Electrical properties of magnetic tunnel junctions affected by two types of interfacial roughness

[1] X. Xu, “Influence of roughness and disorder on tunneling magnetoresistance”, Phys. Rev. B, 73 (2006) 180402R .

[2] Li , and Ch.-Ray. Chang, “Influence of interfacial roughness on the tunnel magnetoresistance”, Physics Letters A, 287 (2001) 415.

[3] Kado, “Large room-temperature inverse magnetoresistance in tunnel junctions
with a Fe3O4 electrode”, Appl. Phys. Lett. 92, (2008)092502.

[4] H. Wu, et al, “Spin-dependent transport properties of Fe₃O₄/MoS₂/Fe₃O₄ junctions”, Scientific Reports 5 (2015) 15984.

[5] Zh. Zhu,et al ,  “Magnetic and transport properties of amorphous, B2 and L2₁ Co₂MnGa thin films”, AIP Advances, 10 (2020) 085020.

[6]  Koley, et al, “Spin Dependent Transport through Driven Magnetic System with Aubry-Andre-Harper Modulation”, Appl. Sci. 11 (2021) 2309.

[7] -D. Yuan, et al, “Giant momentum-dependent spin splitting in centrosymmetric low-Zantiferromagnets”, Phys. Rev. B, 102 (2020) 014422.

[8] Jiao, et al, “First-Principles Prediction of Spin-Polarized Multiple Dirac Rings in Manganese Fluoride”. Phys. Rev. Lett, 119 (2017) 016403.

[9] P. Johansson, “Theory for light emission from a scanning tunneling microscope”, Phys.    Rev. B 42 (1990) 9210(R)

[10] T. Dietz, R.B. Darling, “Coherent electron transport across semiconductor heterojunctions with rough interfaces”, Phys. Rev. B 53 (1996) 3925.

[11] Leo, A.H. MacDonald, “Disorder-assisted tunneling through a double-barrier structure”, Phys. Rev. Lett. 64 (1990) 817.

[12] W. Miller, “The critical role of the barrier thickness in spin filter tunneling”, Journal of Magnetism and Magnetic Materials 321 (2009) 2563.

[13] Long, et al, “J. Gate-controllable spin battery”, Appl. Phys. Lett., 83 (2003) 1397.

[14] Zhang, et al, “Spin Current through a Quantum Dot in the Presence of an Oscillating Magnetic Field”, Phys. Rev. Lett., 91 (2003) 196602.

[15] Földi, et al, “Quantum rings as electron spin beam splitters”, Phys. Rev. B 73 (2006) 155325.

[16] Hatano, et al, “Non-Abelian gauge field theory of the spin-orbit interaction and a perfect spin filter”, Phys. Rev. A, 75 (2007) 032107.

[17] Dey,et al, “Spin Hall effect in a Kagome lattice driven by Rashba spin-orbit interaction” J. Appl. Phys., 112 (2012) 024322.

[18] Földi, et al, “Networks of Quantum Nanorings: Programmable Spintronic Devices”, Nano Lett., 8 (2008) 2556.

[19] C. Liu, and D.D. Coon, “Interface-roughness and island effects on tunneling in quantum wells” J. Appl. Phys. 64 (1988) 6785.

[20] M. Wilczynski, J. Barnas, Journal of Magnetism and Magnetic Materials, “Tunnel magnetoresistance in ferromagnetic double-barrier planar junctions: Coherent tunneling regime”221 (2000) 373.

[21] Y. Tsymbal,O. NMryasov, and P. R LeClair, “Spin-dependent tunneling in magnetic tunnel junctions” J. Phys.: Condens. Matter, 15 (2003) R109–R142.

[22] J. Fabian, S. Das Sarma, “Spintronics Fundamentals and Applications” Rev. Mod.  Phys. 76 (2004) 323.

[23] Saffarzadeh, Journal of Physics: Condensed Matter, “Tunnel magnetoresistance in double spin filter junctions” 15 (2003) 3041.

[24] Baum, et al,“Field emission of monoenergetic spin-polarized electrons” Appl. Phys. 14 (1977) 149.

[25] Ebrahiminejad, et al, “The study of transport properties in rough ferromagnetic
semiconductor rough junctions”, Physica E 48 (2013) 70.

[26] L. Barabasi and H. E. Stanley, Fractal Concepts in Surface Growth, Cambridge University Press, New York, (1995).

[27] D. Costa, et al, “Tunneling Phenomena as a Probe to Investigate Atomic Scale Fluctuations in Metal/Oxide/Metal Magnetic Tunnel Junctions”, Phys. Rev. Lett. 85 (2000) 876.

[28] Bagrets, A. Bagrets, A. Vedyayev, B. Dieny, “Influence of s−d interfacial scattering on the magnetoresistance of magnetic tunnel junctions”, Phys. Rev. B 65 (2002) 064430.